january 2004 200 4 fairchild semiconductor corporation fds6694 rev . e (w) fds6694 30v n-channel fast switching powertrench mosfet general description this n-channel mosfet has been designed specifically to improve the overall efficiency of dc/dc converters using either synchronous or conventional switching pwm controllers. it has been optimized for low gate charge, low r ds( on) and fast switching speed . applications dc/dc converter power management load switch features 12 a, 30 v. r ds(on) = 11 m w @ v gs = 10 v r ds(on) = 1 3.5 m w @ v gs = 4.5 v low gate charge (13 n c typical) high performance trench technology for extremely low r ds(on) high power and current handling capability. s d s s so-8 d d d g d d d d s s s g pin 1 so-8 4 3 2 1 5 6 7 8 absolute maximum ratings t a =25 o c unless otherwise noted symbol parameter ratings units v dss drain-source voltage 30 v v gss gate-source voltage 20 v i d drain current ? continuous (note 1a) 12 a ? pulsed 50 power dissipation for single operation (note 1a) 2.5 (note 1b) 1.4 p d (note 1c) 1.2 w t j , t stg operating and storage junction temperature range ? 55 to +175 c thermal characteristics r q ja thermal resistance, junction-to-ambient (note 1a) 50 c/w r q ja thermal resistance, junction-to-ambient (note 1c) 125 c/w r q jc thermal resistance, junction-to-case (note 1) 25 c/w package marking and ordering information device marking device reel size tape width quantity fds6694 fds6694 13?? 12mm 2500 units fds6694
fds6694 rev . e (w) electrical characteristics t a = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain?source breakdown voltage v gs = 0 v, i d = 250 m a 30 v d bv dss d t j breakdown voltage temperature coefficient i d = 250 m a, referenced to 25 c 22 mv/ c i ds s zero gate voltage drain current v ds = 24 v, v gs = 0 v 1 0 m a i gss gate?body leakage v gs = 20 v, v ds = 0 v 100 na on characteristics (note 2) v gs( th ) gate threshold voltage v ds = v gs , i d = 250 m a 1 2 3 v d v gs( th) d t j gate threshold voltage temperature coefficient i d = 250 m a, referenced to 25 c ?5 mv/ c r ds(on) static drain?source on?resistance v gs = 10 v, i d = 12 a v gs = 4.5 v, i d = 10.5 a v gs = 10 v, i d = 12 a, t j =125 c 9.1 11.1 1 2.2 11 1 3.5 15 m w i d(on) on?state drain current v gs = 10 v, v ds = 5 v 50 a g fs forward transconductance v ds = 5 v, i d = 12 a 50 s dynamic characteristics c iss input capacitance 1293 pf c oss output capacitance 342 pf c rss reverse transfer capacitance v ds = 15 v, v gs = 0 v, f = 1.0 mhz 136 pf r g gate resistance 0.84 w switching characteristics (note 2) t d(on) turn?on delay time 9 18 ns t r turn?on rise time 6 12 ns t d(off) turn?off delay time 28 45 ns t f turn?off fall time v dd = 15 v, i d = ?1 a, v gs = 10 v, r gen = 6 w 10 20 ns q g total gate charge 13 19 nc q gs gate?source charge 4 nc q gd gate?drain charge v ds = 15 v, i d = 12 a, v gs = 5 v 4.7 nc drain?source diode characteristics and maximum ratings i s maximum continuous drain?source diode forward current 2.1 a v sd drain?source diode forward voltage v gs = 0 v, i s = 2.1 a (note 2) 0.74 1.2 v t rr diode reverse recovery time i f = 12 a, d if / d t = 100 a/s 29 ns q rr diode reverse recovery charge 30 nc notes: 1. r q ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. r q jc is guaranteed by design while r q ca is determined by the user's board design. a) 50c/w when mounted on a 1in 2 pad of 2 oz copper b) 105c/w when mounted on a .04 in 2 pad of 2 oz copper c) 125c/w when mounted on a minimum pad. scale 1 : 1 on letter size paper 2. pulse test: pulse width < 300 m s, duty cycle < 2.0% fds6694
fds6694 rev . e (w) typical characteristics 0 10 20 30 40 50 0 0.5 1 1.5 2 v ds , drain-source voltage (v) i d , drain current (a) 3.0v 4.5v 3.5.v 4.0v v gs = 10v 6.0v 0.8 1 1.2 1.4 1.6 1.8 2 2.2 0 10 20 30 40 50 i d , drain current (a) r ds(on) , normalized drain-source on-resistance v gs = 3.5v 4.0v 5.0v 4.5v 10v 6.0v figure 1. on-region characteristics. figure 2. on-resistance variation with drain current and gate voltage. 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 175 t j , junction temperature ( o c) r ds(on) , normalized drain-source on-resistance i d = 12a v gs = 10v 0.004 0.008 0.012 0.016 0.02 0.024 0.028 2 4 6 8 10 v gs , gate to source voltage (v) r ds(on) , on-resistance (ohm) i d = 6a t a = 125 o c t a = 25 o c figure 3. on-resistance variation with temperature. figure 4. on-resistance variation with gate-to-source voltage. 0 10 20 30 40 50 60 70 1.5 2 2.5 3 3.5 4 4.5 v gs , gate to source voltage (v) i d , drain current (a) t a = -55 o c 25 o c 125 o c v ds = 5v 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 v sd , body diode forward voltage (v) i s , reverse drain current (a) t a = 125 o c 25 o c -55 o c v gs = 0v figure 5. transfer characteristics. figure 6. body diode forward voltage variation with source current and temperature. fds6694
fds6694 rev . e (w) typical characteristics 0 2 4 6 8 10 0 5 10 15 20 25 q g , gate charge (nc) v gs , gate-source voltage (v) i d = 12a v ds = 5v 15v 10v 0 400 800 1200 1600 2000 0 5 10 15 20 25 30 v ds , drain to source voltage (v) capacitance (pf) c iss c rss c oss f = 1mhz v gs = 0 v figure 7. gate charge characteristics. figure 8. capacitance characteristics. 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds , drain-source voltage (v) i d , drain current (a) dc 10s 1s 100ms r ds(on) limit v gs = 10v single pulse r q ja = 125 o c/w t a = 25 o c 10ms 1ms 100s 0 10 20 30 40 50 0.01 0.1 1 10 100 t 1 , time (sec) p(pk), peak transient power (w) single pulse r q ja = 125c/w t a = 25c figure 9. maximum safe operating area. figure 10. single pulse maximum power dissipation. 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) r(t), normalized effective transient thermal resistance r q ja (t) = r(t) * r q ja r q ja = 125 c/w t j - t a = p * r q ja (t) duty cycle, d = t 1 / t 2 p(pk) t 1 t 2 single pulse 0.01 0.02 0.05 0.1 0.2 d = 0.5 figure 11. transient thermal response curve. thermal characterization performed using the conditions described in note 1c. transient thermal response will change depending on the circuit board design. fds6694
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